Other options are being explored as alternatives, which include semiconductor nanowire (SNW) based FETs, FETs comprised of 2D materials, and FETs with sophisticated gate structures, such as multiple independent gates or a gate with embedded ferroelectric material. Various new technologies, such as FinFETs, and tunnel-FETs, have been developed in recent years to enable the continuation of Moore's law, but further development with current technologies are uncertain. This has led to ever greater fabrication complexity, and ultimately to challenges in gate fabrication and doping control. Although FETs have evolved structurally from early planar to their current 3D geometries in parallel with the continual shrinkage of its lateral size, the basic operating principle remains the same. A typical FET is a three-terminal device consisting of source ( S), drain ( D), and gate ( G) contacts-where the S-D conductivity is modulated to realize on and off states by applying a voltage or an applied electric field through G. Our work offers new electronic-optical integration strategies and electronic and optical computing approaches.Īs basic electronics building blocks, a field-effect transistor's (FET's) primary switching function is widely used in both logic and memory chips. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g., on/off ratios up to ~1.0 × 10 6 with a source-drain voltage of ~1.43 V, gate-power of ~260 nW, and a subthreshold swing of ~0.3 nW/decade (excluding losses). Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. A light-effect transistor (LET) offers electronic-optical hybridization at the component level, which can continue Moore's law to the quantum region without requiring a FET's fabrication complexity, e.g., physical gate and doping, by employing optical gating and photoconductivity. However, further FET down scaling is facing physical and technical challenges. Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g., field-effect transistors (FETs), remains the same. 4Advanced Materials Research Institute, University of New Orleans, New Orleans, LA, USA. ![]() 3Center for Optoelectronics and Optical Communications, University of North Carolina at Charlotte, Charlotte, NC, USA.2Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, NC, USA.1Nanoscale Science Program, University of North Carolina at Charlotte, Charlotte, NC, USA.Rai 4 Kai Wang 4 Weilie Zhou 4 * Yong Zhang 1,2,3 *
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